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IPB47N10SL26ATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 100V 47A Automotive 3-Pin(2+Tab) TO-263
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Inventory: 4367
Minimum: 1
Total Price: USD $0.67
Unit Price: USD $0.672079
≥1 USD $0.672079
≥10 USD $0.634037
≥100 USD $0.598148
≥500 USD $0.564291
≥1000 USD $0.532347

Technical Details

Supply Chain

Factory Lead Time 10 Weeks

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series SIPMOS?
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 175W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 175W
Turn On Delay Time 50 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 26m Ω @ 33A, 10V
Vgs(th) (Max) @ Id 2V @ 2mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 47A Tc
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
Rise Time 100ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 70 ns
Continuous Drain Current (ID) 47A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.04Ohm
Avalanche Energy Rating (Eas) 400 mJ

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