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SIS434DN-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? 1212-8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description VISHAY - SIS434DN-T1-GE3 - MOSFET, N-KANAL, 40V, 35A, POWERPAK
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Inventory: 3113
Minimum: 1
Total Price: USD $0.24
Unit Price: USD $0.235745
≥1 USD $0.235745
≥10 USD $0.228811
≥100 USD $0.221878
≥500 USD $0.213211

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? 1212-8
Number of Pins 8
Transistor Element Material SILICON

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 7.6mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 250
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code S-PDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.8W Ta 52W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.8W
Case Connection DRAIN
Turn On Delay Time 30 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.6m Ω @ 16.2A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1530pF @ 20V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 35A
Threshold Voltage 2.2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 60A
Avalanche Energy Rating (Eas) 45 mJ

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