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TPN2R503NC,L1Q

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-Ch 30V 2230pF 40nC 2.5mOhm 85A 35W
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Inventory: 2099
Minimum: 1
Total Price: USD $0.85
Unit Price: USD $0.84588
≥1 USD $0.84588
≥10 USD $0.69426
≥100 USD $0.672315
≥500 USD $0.651368
≥1000 USD $0.629423

Technical Details

Supply Chain

Factory Lead Time 17 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8

Technical

Operating Temperature 150°C TJ
Packaging Digi-Reel?
Published 2014
Series U-MOSVIII
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 2.5mOhm
Capacitance 2.23nF
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 700mW Ta 35W Tc
Element Configuration Single
Power Dissipation 35W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.3V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 2230pF @ 15V
Current - Continuous Drain (Id) @ 25°C 40A Ta
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 68 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V

Compliance

RoHS Status RoHS Compliant

Alternative Model

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