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SPD04P10PGBTMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 100V 4A TO252-3
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Inventory: 68
Minimum: 1
Total Price: USD $0.26
Unit Price: USD $0.259028
≥1 USD $0.259028
≥10 USD $0.25141
≥100 USD $0.243791
≥500 USD $0.234268

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series SIPMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 38W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 38W
Case Connection DRAIN
Turn On Delay Time 5.7 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 1 Ω @ 2.8A, 10V
Vgs(th) (Max) @ Id 4V @ 380μA
Halogen Free Not Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 319pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 8.6 ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.5 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 4A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -100V
Drain Current-Max (Abs) (ID) 4A
Avalanche Energy Rating (Eas) 57 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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