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BSZ063N04LS6ATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description TRENCH <= 40V
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Inventory: 12586
Minimum: 1
Total Price: USD $0.29
Unit Price: USD $0.289419
≥1 USD $0.289419
≥10 USD $0.280907
≥100 USD $0.272395
≥500 USD $0.261754

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Series OptiMOS? 6
Part Status Active
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 38W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.3m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 20V
Current - Continuous Drain (Id) @ 25°C 15A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 40A
Drain-source On Resistance-Max 0.0088Ohm
Pulsed Drain Current-Max (IDM) 160A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 25 mJ

Compliance

RoHS Status RoHS Compliant

Alternative Model

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