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QS6U22TR

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 20V 1.5A TSMT6
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Inventory: 103067
Minimum: 1
Total Price: USD $0.13
Unit Price: USD $0.12768
≥1 USD $0.12768
≥10 USD $0.104738
≥100 USD $0.101745
≥500 USD $0.097755
≥1000 USD $0.094763

Technical Details

Supply Chain

Factory Lead Time 20 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -1.5A
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 6
Number of Elements 1
Power Dissipation-Max 1.25W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 10 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 215m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 270pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1.5A Ta
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V
Rise Time 12 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 1.5A
Threshold Voltage -2V
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.235Ohm
Drain to Source Breakdown Voltage -20V
FET Feature Schottky Diode (Isolated)

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