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TPC8134,LQ(S

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 40V 5A 8SOP
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Inventory: 7520
Minimum: 1
Total Price: USD $0.22
Unit Price: USD $0.217831
≥1 USD $0.217831
≥10 USD $0.211424
≥100 USD $0.205018
≥500 USD $0.197009

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series U-MOSVI
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 52m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 2V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 890pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 8ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +20V, -25V
Fall Time (Typ) 30 ns
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5A
Drain-source On Resistance-Max 0.066Ohm
DS Breakdown Voltage-Min 40V

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