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RoHS
RoHS RoHS compliant
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 300V 1.2A 8DFN
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Inventory: 7504
Minimum: 1
Total Price: USD $0.99
Unit Price: USD $0.987525
≥1 USD $0.987525
≥10 USD $0.80997
≥100 USD $0.785033
≥500 USD $0.759098
≥1000 USD $0.73416

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Transistor Element Material SILICON

Technical

Operating Temperature -50°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code S-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.1W Ta 33W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 830m Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.2A Ta 4A Tc
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Drain to Source Voltage (Vdss) 300V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 4A
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 0.83Ohm
Pulsed Drain Current-Max (IDM) 13A
DS Breakdown Voltage-Min 300V
Avalanche Energy Rating (Eas) 132 mJ

Compliance

RoHS Status ROHS3 Compliant
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