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TK3A65DA(STA4,QM)

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 650V 2.5A TO-220SIS
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Inventory: 6510
Minimum: 1
Total Price: USD $0.58
Unit Price: USD $0.580545
≥1 USD $0.580545
≥10 USD $0.476805
≥100 USD $0.461843
≥500 USD $0.44688
≥1000 USD $0.431918

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Supplier Device Package TO-220SIS

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2009
Series π-MOSVII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 35W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.51Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id 4.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.5A Ta
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Rise Time 18ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 2.5A
Gate to Source Voltage (Vgs) 30V
Input Capacitance 490pF
Rds On Max 2.51 Ω

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