Operating Temperature 150°C TJ
Packaging Tube
Published 2010
Series π-MOSVII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 35W Tc
Power Dissipation 35W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.04 Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 4.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.5A Ta
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 7.5A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V