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IPB80N03S4L02ATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 80A TO263-3
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Inventory: 1541
Minimum: 1
Total Price: USD $1.13
Unit Price: USD $1.128203
≥1 USD $1.128203
≥10 USD $1.095021
≥100 USD $1.061838
≥500 USD $1.02036

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series OptiMOS?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 136W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.4m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 2.2V @ 90μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 9750pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Rise Time 9 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 62 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 30V
Drain-source On Resistance-Max 0.0024Ohm
Avalanche Energy Rating (Eas) 260 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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