Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Series HiPerFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1250W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25kW
Case Connection DRAIN
Turn On Delay Time 45 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 320m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 6.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 9940pF @ 25V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V
Rise Time 250ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 54 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.32Ohm
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 96A