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RoHS
RoHS RoHS compliant
Package TO-247-3 Variant
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 800V 31A T-MAX
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Inventory: 68
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Total Price: USD $15.9
Unit Price: USD $15.90204
≥1 USD $15.90204

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Series POWER MOS 7?
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 31A
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 565W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 565W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 240m Ω @ 15.5A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 4670pF @ 25V
Current - Continuous Drain (Id) @ 25°C 31A Tc
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 31A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.24Ohm
Avalanche Energy Rating (Eas) 2500 mJ

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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