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TPH3208LSG

Transphorm
RoHS
RoHS RoHS compliant
Package 3-PowerDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description GANFET N-CH 650V 20A 3PQFN
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case 3-PowerDFN

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology GaNFET (Gallium Nitride)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 96W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 130m Ω @ 14A, 8V
Vgs(th) (Max) @ Id 2.6V @ 300μA
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 400V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 8V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±18V

Compliance

RoHS Status RoHS Compliant

Alternative Model

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