IXFH21N50F

IXYS

RoHS

Package TO-247-3

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description IXYS RF IXFH21N50F RF FET Transistor, 500 V, 21 A, 300 W, 500 kHz, TO-247AD

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Inventory: 339

Minimum: 1

Total Price: USD $11.61

Unit Price: USD $11.612895

≥1 USD $11.612895

≥10 USD $9.529118

≥100 USD $9.230865

≥500 USD $8.93361

≥1000 USD $8.635358

Technical Details

Supply Chain

Factory Lead Time 10 Weeks

Physical

Mounting Type Through Hole

Package / Case TO-247-3

Surface Mount NO

Number of Pins 3

Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tube

Published 2002

Series HiPerRF?

JESD-609 Code e1

Pbfree Code yes

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 3

ECCN Code EAR99

Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature AVALANCHE RATED

Subcategory FET General Purpose Power

Technology MOSFET (Metal Oxide)

Peak Reflow Temperature (Cel) NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Pin Count 3

Qualification Status Not Qualified

Number of Elements 1

Power Dissipation-Max 300W Tc

Element Configuration Single

Operating Mode ENHANCEMENT MODE

Power Dissipation 300W

Case Connection DRAIN

FET Type N-Channel

Transistor Application SWITCHING

Rds On (Max) @ Id, Vgs 250m Ω @ 10.5A, 10V

Vgs(th) (Max) @ Id 5.5V @ 4mA

Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 25V

Current - Continuous Drain (Id) @ 25°C 21A Tc

Gate Charge (Qg) (Max) @ Vgs 77nC @ 10V

Rise Time 12 ns

Drive Voltage (Max Rds On,Min Rds On) 10V

Vgs (Max) ±20V

Fall Time (Typ) 7.7 ns

Turn-Off Delay Time 36 ns

Continuous Drain Current (ID) 21A

Gate to Source Voltage (Vgs) 20V

Drain-source On Resistance-Max 0.25Ohm

Drain to Source Breakdown Voltage 500V

Pulsed Drain Current-Max (IDM) 84A

Avalanche Energy Rating (Eas) 1500 mJ

Compliance

REACH SVHC No SVHC

RoHS Status RoHS Compliant

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