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SI4752DY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 30 Volts 25 Amps 6.25 Watts
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Inventory: 6168
Minimum: 1
Total Price: USD $3.33
Unit Price: USD $3.328658
≥1 USD $3.328658
≥10 USD $2.731155
≥100 USD $2.646368
≥500 USD $2.560583
≥1000 USD $2.474798

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series SkyFET?, TrenchFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3W Ta 6.25W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 15V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 25A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0055Ohm
Drain to Source Breakdown Voltage 30V
FET Feature Schottky Diode (Body)

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Alternative Model

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