Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Series CoolMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish TIN
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 219W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 219W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 125m Ω @ 14.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 960μA
Input Capacitance (Ciss) (Max) @ Vds 2267pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
Rise Time 17ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 48 ns
Turn-Off Delay Time 74 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 89A
DS Breakdown Voltage-Min 600V