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RN1962FE(TE85L,F)

Toshiba Semiconductor and Storage
RoHS
/
Package SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
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Inventory: 3961
Minimum: 1
Total Price: USD $0.14
Unit Price: USD $0.1386
≥1 USD $0.1386
≥10 USD $0.091476
≥100 USD $0.065789
≥500 USD $0.0552
≥1000 USD $0.051846

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Technical

Packaging Cut Tape (CT)
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 100mW
Reach Compliance Code unknown
Number of Elements 2
Polarity NPN
Element Configuration Dual
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Emitter Base Voltage (VEBO) 10V
hFE Min 50
Resistor - Base (R1) 10k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 10k Ω

Alternative Model

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