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RN1971TE85LF

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package 6-TSSOP, SC-88, SOT-363
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
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Inventory: 8409
Minimum: 1
Total Price: USD $0.11
Unit Price: USD $0.106766
≥1 USD $0.106766
≥200 USD $0.042601
≥500 USD $0.041177
≥1000 USD $0.040473

Technical Details

Supply Chain

Factory Lead Time 11 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6

Technical

Packaging Cut Tape (CT)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 200mW
Polarity NPN
Element Configuration Dual
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Emitter Base Voltage (VEBO) 5V
hFE Min 120
Resistor - Base (R1) 10k Ω
Continuous Collector Current 100mA

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Alternative Model

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