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RoHS
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Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description Bipolar Transistors - Pre-Biased TRANS W/ BLT-IN RES GL WNG 2.9x2.8mm
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Technical Details

Supply Chain

Factory Lead Time 10 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT IN BIAS RESISTOR
HTS Code 8541.21.00.95
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number DRA2115
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) -50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage -250mV
Max Breakdown Voltage 50V
Resistor - Base (R1) 100 k Ω
Continuous Collector Current -100mA

Compliance

RoHS Status RoHS Compliant

Dimensions

Height 1.1mm
Length 2.9mm
Width 1.5mm
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