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RN49A1FE(TE85L,F)

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description PNP + NPN BRT, Q1BSR=2.2K?, Q1BE
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Inventory: 1424
Minimum: 1
Total Price: USD $0.09
Unit Price: USD $0.085475
≥1 USD $0.085475
≥200 USD $0.034105
≥500 USD $0.032966
≥1000 USD $0.032402

Technical Details

Supply Chain

Factory Lead Time 10 Weeks

Physical

Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Transistor Element Material SILICON

Technical

Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory BIP General Purpose Small Signal
Number of Elements 2
Power - Max 100mW
Polarity/Channel Type NPN/PNP
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 200MHz 250MHz
Power Dissipation-Max (Abs) 0.1W
Resistor - Base (R1) 2.2k Ω, 22k Ω
Resistor - Emitter Base (R2) 47k Ω

Compliance

RoHS Status RoHS Compliant

Alternative Model

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