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RN1708JE(TE85L,F)

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package SOT-553
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description NPN X 2 BRT, Q1BSR=22K?, Q1BER=4
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Inventory: 202
Minimum: 1
Total Price: USD $0.35
Unit Price: USD $0.35112
≥1 USD $0.35112
≥10 USD $0.24486
≥100 USD $0.123908
≥500 USD $0.101049
≥1000 USD $0.074973
≥3000 USD $0.063082

Technical Details

Supply Chain

Factory Lead Time 10 Weeks

Physical

Mounting Type Surface Mount
Package / Case SOT-553
Surface Mount YES
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Technical

Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory BIP General Purpose Small Signal
Number of Elements 2
Power - Max 100mW
Polarity/Channel Type NPN
Transistor Type 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Power Dissipation-Max (Abs) 0.1W
Resistor - Base (R1) 22k Ω
Resistor - Emitter Base (R2) 47k Ω

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