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RN2101ACT(TPL3)

Toshiba Semiconductor and Storage
RoHS
/
Package SC-101, SOT-883
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS PNP 0.1W CST3
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Transistor Element Material SILICON

Technical

Packaging Tape & Reel (TR)
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 100mW
Number of Elements 1
Power - Max 100mW
Polarity/Channel Type PNP
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 150mV
Max Collector Current 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Resistor - Base (R1) 4.7 k Ω
Resistor - Emitter Base (R2) 4.7 k Ω

Compliance

RoHS Status RoHS Compliant

Alternative Model

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