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FA4F4M-T1B-A
Renesas Electronics AmericaRoHS 
RoHS compliant
RoHS compliantPackage /
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description
PROGRAM ADAPTER
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Inventory: 7064
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Technical Details
Physical
Surface Mount YES
Transistor Element Material SILICON
Technical
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory BIP General Purpose Small Signal
Pin Count 3
Number of Elements 1
Power - Max 200mW
Polarity/Channel Type NPN
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 50mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 250μ, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Power Dissipation-Max (Abs) 0.2W
Resistor - Base (R1) 22 Ω
Resistor - Emitter Base (R2) 22 Ω
Compliance
RoHS Status RoHS Compliant
Alternative Model
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