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Transistors - Bipolar (BJT) - Single, Pre-Biased
BCR 569 E6327

BCR 569 E6327

Infineon Technologies

RoHS

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Package TO-236-3, SC-59, SOT-23-3

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased

Description TRANS PREBIAS PNP 300MW SOT23-3

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Technical Details

Physical

Mounting Type Surface Mount

Package / Case TO-236-3, SC-59, SOT-23-3

Supplier Device Package SOT-23-3

Technical

Packaging Tape & Reel (TR)

Published 2007

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Power - Max 330mW

Transistor Type PNP - Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA 5V

Current - Collector Cutoff (Max) 100nA ICBO

Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) 50V

Current - Collector (Ic) (Max) 500mA

Frequency - Transition 150MHz

Resistor - Base (R1) 4.7 kOhms

Alternative Model

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Vishay Semiconductor Diodes Division

ROHM Semiconductor

Rochester Electronics, LLC

STMicroelectronics

SMAJ4466CE3/TR13

Microsemi Corporation

Microsemi Corporation

Taiwan Semiconductor Corporation

Central Semiconductor Corp

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