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RN2110MFV,L3F

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package SOT-723
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor
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Inventory: 8117
Minimum: 1
Total Price: USD $0.18
Unit Price: USD $0.17556
≥1 USD $0.17556
≥10 USD $0.122892
≥100 USD $0.059783
≥500 USD $0.04984
≥1000 USD $0.034631
≥3000 USD $0.030021

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mounting Type Surface Mount
Package / Case SOT-723
Surface Mount YES
Transistor Element Material SILICON

Technical

Packaging Tape & Reel (TR)
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN RESISTOR
Power - Max 150mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Resistor - Base (R1) 4.7 k Ω

Compliance

RoHS Status RoHS Compliant

Alternative Model

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