Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series Z-FET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology SiCFET (Silicon Carbide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 69W Tc
Element Configuration Single
Power Dissipation 69W
Turn On Delay Time 9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.1Ohm @ 2A, 20V
Vgs(th) (Max) @ Id 2.4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 191pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 4.9A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 20V
Rise Time 46ns
Drain to Source Voltage (Vdss) 1700V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -10V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 15 ns
Evaluation Kit Yes
Continuous Drain Current (ID) 4.9A
Threshold Voltage 2.4V
Gate to Source Voltage (Vgs) 25V
Input Capacitance 191pF
Drain to Source Resistance 950mOhm
Rds On Max 1.1 Ω
Nominal Vgs 2.4 V