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UPA2754GR(0)-E1-AY

Renesas Electronics America
RoHS
RoHS RoHS compliant
Package /
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description TRANSISTOR
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Technical Details

Physical

Surface Mount YES
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Technical

Packaging Tape & Reel (TR)
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) Vendor Undefined
Number of Terminations 8
ECCN Code EAR99
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-G8
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 11A
Drain-source On Resistance-Max 0.0186Ohm
Pulsed Drain Current-Max (IDM) 88A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 12.1 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR

Alternative Model

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