HAT2266HWS-E

Renesas Electronics America

RoHS

Package SC-100, SOT-669

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description Trans MOSFET N-CH 60V 30A 5-Pin(4+Tab) LFPAK

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Technical Details

Physical

Mounting Type Surface Mount

Package / Case SC-100, SOT-669

Technical

Operating Temperature 150°C

Packaging Tape & Reel (TR)

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Technology MOSFET (Metal Oxide)

Power Dissipation-Max 23W Tc

FET Type N-Channel

Rds On (Max) @ Id, Vgs 12m Ω @ 15A, 10V

Vgs(th) (Max) @ Id 2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 10V

Current - Continuous Drain (Id) @ 25°C 30A Ta

Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V

Drain to Source Voltage (Vdss) 60V

Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V

Vgs (Max) ±20V

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