Operating Temperature 150°C TJ
Part Status Active
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 102W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 102m Ω @ 18.1A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V