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IRL1004PBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 40V 130A TO-220AB
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Inventory: 1220
Minimum: 1
Total Price: USD $0.54
Unit Price: USD $0.538014
≥1 USD $0.538014
≥10 USD $0.52219
≥100 USD $0.506366
≥500 USD $0.486587

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 6.5mOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 40V
Technology MOSFET (Metal Oxide)
Current Rating 130A
Number of Elements 1
Power Dissipation-Max 200W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 200W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.5m Ω @ 78A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5330pF @ 25V
Current - Continuous Drain (Id) @ 25°C 130A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 4.5V
Rise Time 210ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 130A
Threshold Voltage 1V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 520A
Dual Supply Voltage 40V
Avalanche Energy Rating (Eas) 700 mJ
Nominal Vgs 1 V

Dimensions

Height 8.77mm
Length 10.6426mm
Width 4.82mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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