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SIHF8N50D-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 500V 850mOhm@10V 8.7A N-Ch D-SRS
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Inventory: 10095
Minimum: 1
Total Price: USD $7.45
Unit Price: USD $7.451325
≥1 USD $7.451325
≥10 USD $6.114675
≥100 USD $5.923155
≥500 USD $5.732633
≥1000 USD $5.541113

Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON

Dimensions

Height 9.8mm
Length 10.63mm
Width 4.83mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 33W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 33W
Case Connection ISOLATED
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 850m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 527pF @ 100V
Current - Continuous Drain (Id) @ 25°C 8.7A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 8.7A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.85Ohm
Drain to Source Breakdown Voltage 500V
Avalanche Energy Rating (Eas) 29 mJ

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