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RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 58A
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Inventory: 3190
Minimum: 1
Total Price: USD $0.21
Unit Price: USD $0.205124
≥1 USD $0.205124
≥10 USD $0.199091
≥100 USD $0.193058
≥500 USD $0.185517

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series StrongIRFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 83W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.9m Ω @ 35A, 10V
Vgs(th) (Max) @ Id 3.7V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2170pF @ 25V
Current - Continuous Drain (Id) @ 25°C 58A Tc
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 58A
JEDEC-95 Code TO-252AA
Drain-source On Resistance-Max 0.0099Ohm
Pulsed Drain Current-Max (IDM) 217A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 124 mJ
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