Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HiPerFAST?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 660W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*120N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 660W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 200A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.1V
Turn On Time 120 ns
Test Condition 480V, 100A, 2.4 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 120A
Turn Off Time-Nom (toff) 540 ns
IGBT Type PT
Gate Charge 350nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 60ns/200ns
Switching Energy 2.4mJ (on), 5.5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 280ns