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FF225R12MS4BOSA1

Infineon Technologies
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE VCES 1200V 225A
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Pricing & Ordering
Inventory: 98
Minimum: 1
Total Price: USD $171.68
Unit Price: USD $171.6792
≥1 USD $171.6792
≥10 USD $160.7991
≥100 USD $154.753673

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Technical

Operating Temperature -40°C~125°C
Published 2002
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 11
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 11
Qualification Status Not Qualified
Number of Elements 2
Configuration 2 Independent
Element Configuration Dual
Case Connection ISOLATED
Power - Max 1450W
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 275A
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 180 ns
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 225A
Turn Off Time-Nom (toff) 590 ns
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 15nF @ 25V

Physical

Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 11
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant
Lead Free Contains Lead

Alternative Model

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