MS1202

Microsemi Corporation

RoHS

Package M135

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF

Description Trans GP BJT NPN 35V 1A 4-Pin Style M135

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Inventory: 8487

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Technical Details

Supply Chain

Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)

Technical

Operating Temperature 200°C TJ

Packaging Bulk

Published 2003

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 4

ECCN Code EAR99

Additional Feature HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

Subcategory Other Transistors

Max Power Dissipation 15W

Terminal Position RADIAL

Terminal Form FLAT

Pin Count 4

Number of Elements 1

Configuration SINGLE

Case Connection EMITTER

Power - Max 15W

Transistor Application AMPLIFIER

Polarity/Channel Type NPN

Transistor Type NPN

Collector Emitter Voltage (VCEO) 35V

Max Collector Current 1A

DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 100mA 5V

Collector Emitter Breakdown Voltage 35V

Gain 8.4dB

Frequency - Transition 118MHz~136MHz

Collector Base Voltage (VCBO) 65V

Highest Frequency Band VERY HIGH FREQUENCY B

Collector-Base Capacitance-Max 15pF

Compliance

Radiation Hardening No

RoHS Status RoHS Compliant

Physical

Mount Chassis Mount, Stud

Mounting Type Chassis Mount

Package / Case M135

Number of Pins 4

Transistor Element Material SILICON

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