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Transistors - Bipolar (BJT) - RF
MPSH10_D27Z

MPSH10_D27Z

ON Semiconductor

RoHS

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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF

Description RF TRANS NPN 25V 650MHZ TO92-3

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Technical Details

Physical

Mounting Type Through Hole

Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package TO-92-3

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tape & Reel (TR)

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Base Part Number MPSH10

Power - Max 350mW

Transistor Type NPN

DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA 10V

Voltage - Collector Emitter Breakdown (Max) 25V

Current - Collector (Ic) (Max) 50mA

Frequency - Transition 650MHz

Alternative Model

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NVD4856NT4G-VF01

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BZX384B24-G3-08

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Microsemi Corporation

BTA420-800CT,127

WeEn Semiconductors

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