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Transistors - Bipolar (BJT) - Single
PN3642_D26Z

PN3642_D26Z

ON Semiconductor

RoHS

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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Description TRANS NPN 45V 0.5A TO-92

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Technical Details

Physical

Mounting Type Through Hole

Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tape & Reel (TR)

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Power - Max 625mW

Transistor Type NPN

DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 10V

Current - Collector Cutoff (Max) 50nA

Vce Saturation (Max) @ Ib, Ic 220mV @ 15mA, 150mA

Voltage - Collector Emitter Breakdown (Max) 45V

Current - Collector (Ic) (Max) 500mA

Alternative Model

RN1910FE(T5L,F,T)

Toshiba Semiconductor and Storage

Diodes Incorporated

Taiwan Semiconductor Corporation

BFP183E7764HTSA1

Infineon Technologies

Rochester Electronics, LLC

STMicroelectronics

Microsemi Corporation

BZX84B9V1-G3-18

Vishay Semiconductor Diodes Division

Microsemi Corporation

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