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SI3499DV-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 8.0V 7.0A 2.0W 23mohm @ 4.5V
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Inventory: 6028
Minimum: 1
Total Price: USD $4.65
Unit Price: USD $4.646355
≥1 USD $4.646355
≥10 USD $3.812445
≥100 USD $3.693743
≥500 USD $3.574043
≥1000 USD $3.45534

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Supplier Device Package 6-TSOP
Weight 19.986414mg

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 23mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.1W Ta
Element Configuration Single
Power Dissipation 1.1W
Turn On Delay Time 27 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 23mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 750mV @ 250μA
Current - Continuous Drain (Id) @ 25°C 5.3A Ta
Gate Charge (Qg) (Max) @ Vgs 42nC @ 4.5V
Rise Time 65ns
Drain to Source Voltage (Vdss) 8V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±5V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 210 ns
Continuous Drain Current (ID) -7A
Threshold Voltage -350mV
Gate to Source Voltage (Vgs) 5V
Drain to Source Resistance 23mOhm
Rds On Max 23 mΩ
Nominal Vgs -350 mV

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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