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SPD04N80C3ATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 800V 4A 3-Pin TO-252 T/R
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Inventory: 21916
Minimum: 1
Total Price: USD $0.47
Unit Price: USD $0.469999
≥1 USD $0.469999
≥10 USD $0.456176
≥100 USD $0.442352
≥500 USD $0.425073

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package PG-TO252-3

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series CoolMOS?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Current Rating 4A
Number of Elements 1
Power Dissipation-Max 63W Tc
Power Dissipation 63W
Turn On Delay Time 25 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 3.9V @ 240μA
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 800V
Input Capacitance 570pF
Drain to Source Resistance 1.1Ohm
Rds On Max 1.3 Ω
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