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SI3433BDV-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 20V 5.6A 2.0W 42mohm @ 4.5V
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Inventory: 764
Minimum: 1
Total Price: USD $1.16
Unit Price: USD $1.162088
≥1 USD $1.162088
≥10 USD $0.95361
≥100 USD $0.923685
≥500 USD $0.89376
≥1000 USD $0.863835

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 6
Number of Elements 1
Power Dissipation-Max 1.1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 15 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 42m Ω @ 5.6A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250μA
Current - Continuous Drain (Id) @ 25°C 4.3A Ta
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Rise Time 45ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) -4.3A
Threshold Voltage -450mV
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.042Ohm
Drain to Source Breakdown Voltage -20V
Nominal Vgs -450 mV

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant

Alternative Model

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