Packaging Cut Tape (CT)
Published 2012
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation 160W
Turn On Delay Time 23 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 5360pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Rise Time 48ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 60V
Input Capacitance 5.36nF
Recovery Time 42 ns
Drain to Source Resistance 4.4mOhm
Rds On Max 4.4 mΩ
Nominal Vgs 1 V