Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 48W Tc
Power Dissipation 48W
Turn On Delay Time 8.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.7mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 13V
Current - Continuous Drain (Id) @ 25°C 57A Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Rise Time 38ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.9 ns
Turn-Off Delay Time 9.1 ns
Continuous Drain Current (ID) 57A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Dual Supply Voltage 25V
Input Capacitance 900pF
Recovery Time 26 ns
Drain to Source Resistance 12.9mOhm
Rds On Max 8.7 mΩ
Nominal Vgs 1.9 V