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TK20A25D,S5Q(M

Toshiba Semiconductor and Storage
RoHS
/
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 250V 20A TO-220SIS
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220SIS

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2009
Series π-MOSVII
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 45W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2550pF @ 100V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V

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