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Package 8-SMD, Gull Wing
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 60V 1A SOT-223-8
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Gull Wing
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10
ECCN Code EAR99
Terminal Finish MATTE TIN
Voltage - Rated DC 60V
Max Power Dissipation 2.25W
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating 1A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZDM4206N
JESD-30 Code R-PDSO-G10
Qualification Status Not Qualified
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.75W
Turn On Delay Time 8 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 100pF @ 25V
Rise Time 12ns
Fall Time (Typ) 15 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 1A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 1A
Drain-source On Resistance-Max 1Ohm
Drain to Source Breakdown Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
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