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NTMD2C02R2

ON Semiconductor
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N/P-CH 20V 8SOIC
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Inventory: 8798
Minimum: 1
Total Price: USD $0.42
Unit Price: USD $0.420945
≥1 USD $0.420945
≥10 USD $0.346133
≥100 USD $0.33516
≥500 USD $0.324188
≥1000 USD $0.313215

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory Other Transistors
Voltage - Rated DC 20V
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 2A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 43m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5.2A 3.4A
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Rise Time 40ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 35 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 3.4A
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.043Ohm
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 48A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Alternative Model

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