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ZXMC4A16DN8TA

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N/P-CH 40V 4A/3.6A 8SOIC
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Inventory: 2535
Minimum: 1
Total Price: USD $1.41
Unit Price: USD $1.409468
≥1 USD $1.409468
≥10 USD $1.1571
≥100 USD $1.12119
≥500 USD $1.084283
≥1000 USD $1.048373

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON

Dimensions

Height 1.5mm
Length 5mm
Width 4mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 60mOhm
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 1.8W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 4.7A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Turn On Delay Time 3.7 ns
FET Type N and P-Channel Complementary
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 4.5A, 10V, 60m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 1V @ 250mA (Min)
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 40V 1000pF @ 20V
Current - Continuous Drain (Id) @ 25°C 5.2A Ta 4.7A Ta
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 5.5 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 18 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 5.2A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4A
Drain to Source Breakdown Voltage 40V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Alternative Model

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