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IXTB30N100L

IXYS
RoHS
RoHS RoHS compliant
Package TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 1000V 30A PLUS264
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Inventory: 6038
Minimum: 1
Total Price: USD $6.48
Unit Price: USD $6.482186
≥1 USD $6.482186
≥10 USD $6.115274
≥100 USD $5.76912
≥500 USD $5.44257
≥1000 USD $5.1345
≥3000 USD $4.843871

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 800W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 800W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 450m Ω @ 500mA, 20V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 545nC @ 20V
Rise Time 70 ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) ±30V
Fall Time (Typ) 78 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.45Ohm
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 70A
Avalanche Energy Rating (Eas) 2000 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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