Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Current Rating 75A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 2.4W Ta 214W Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 214W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.5m Ω @ 37.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4510pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Ta
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 112ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 100 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 75A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0095Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 225A
Avalanche Energy Rating (Eas) 844 mJ