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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 55V 51A TO-220AB
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Inventory: 55691
Minimum: 1
Total Price: USD $0.35
Unit Price: USD $0.349125
≥1 USD $0.349125
≥10 USD $0.286283
≥100 USD $0.277305
≥500 USD $0.268328
≥1000 USD $0.25935

Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2003
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 80W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13.9m Ω @ 31A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1420pF @ 25V
Current - Continuous Drain (Id) @ 25°C 51A Tc
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 51A
Drain-source On Resistance-Max 0.0139Ohm
Pulsed Drain Current-Max (IDM) 200A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 86 mJ

Compliance

RoHS Status Non-RoHS Compliant
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